Al-doped single-crystalline Si(3)N(4) nanowires were synthesized by catalyst-assisted pyrolysis of polymeric precursors. The doping levels can be controlled by tailoring the Al concentration in the precursors. It is found that the Al concentration has a significant effect on the shape, sizes, and phase compositions of the synthesized Si(3)N(4) low-dimensional nanomaterials. The photoluminescence measurements revealed that the Al dopants have a profound effect on the emission behavior. The current study provides a simple way to realize the controlled doping in Si(3)N(4) nanomaterials, which could be useful for applications in optoelectronic nanodevices.
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Yang et al. (2007) studied this question.
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