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Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm, Onuma, Takeyoshi, Chichibu, Shigefusa F., Aoyama, Toyomi, Nakajima, Kiyomi, Ahmet, Parhat, Azuhata, Takashi, Chikyow, Toyohiro, Sota, Takayuki, Nagahama, Shin-ichi, Mukai, Takashi
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Onuma et al. (2003) studied this question.
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