Plasma deposition of hydrogenated amorphous silicon: Effect of rf power

This is the authors' abstract. We don't add key points for this paper.

The experimentally determined growth rate power dependence of plasma-enhanced chemical-vapor-deposited amorphous silicon was compared with the predicted dependence for the case when the SiH3 radicals are the dominant contributors to film growth. The higher experimental growth rate compared to its calculated value can be explained by the influence of Si2H6 produced in the discharge. The maximum of the growth rate was found to be around 50 mW/cm3 . The decrease of the growth rate at powers exceeding 50 mW/cm3 can be explained by the increased influence of hydrogen, which is consistent with the measurements of the refractive index of the deposited films.