A Q-switched ruby laser has been used to anneal GaAs implanted with selenium or tellurium ions. Electron concentrations in the range 1–2 × 1019 cm−3 were measured for samples implanted at room temperature or 200°C with a dose of 1–5 × 1015 ions cm−2. High electrical activities were obtained both with and without Si3N4 coatings.
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Sealy et al. (1978) studied this question.
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