Deep implantation of nitrogen into GaAs for selective three-dimensional microstructuring

Results are presented for deep implantation of nitrogen into n-type GaAs. The main purpose of these investigations is to clarify whether deep implantation can be a suitable process to create buried, selectively etchable layers for the fabrication of micromechanical structures in GaAs. The implanted layers have been characterized by x-ray photoelectron spectroscopy (XPS) combined with sputter profiling, electrical measurements using test Schottky diodes, and selected etching techniques. XPS depth profiling shows the formation of a GaAs1−xNy layer with y