We demonstrate the growth of small band gap (Eg∼0.6 eV) strained and lattice matched single crystal InGaAsN alloys on InP substrates. InGaAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen source. Lattice-matched, 0.5-μm-thick InGaAsN layers with smooth surface morphologies and abrupt interfaces were achieved. Low temperature photoluminescence measurements reveal a band gap emission wavelength of 1.9 μm (at 20 K) for lattice matched InGaAsN (N∼2%). Tensile strained In0.53Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 μm at 20 K are also reported.
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Gokhale et al. (1999) studied this question.
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