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A model used in calculating the depth distribution of implanted atoms, and the energy released into the electron and nuclear subsystems of the solid is studied. It takes into account the initial charge and the fluctuations of charge states of high-energy ions with energies E ⩽1 MeV amu −1 . The results of calculations are obtained on the basis of solutions of transport equations. Satisfactory agreement between theoretical predictions and experimental results is observed for a broad class of ion-target systems.
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Комаров et al. (1998) studied this question.
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