Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method

Thermally grown NiO x and Cu-doped NiO x (Cu:NiO x ) thin films were fabricated as resistive layers for Cu/NiO x /Pt and Cu/Cu:NiO x /Pt devices and their resistive switching properties were investigated. The two devices had reversible resistive switching properties, nondestructive readout, and long retention. However, the Cu/NiO x /Pt device had large voltage dispersions in the resistive switching operation. This work improved the voltage dispersions of the resistive switching operation by Cu-doping in the NiO x thin film. The operating voltages of the Cu/Cu:NiO x /Pt device were also smaller than those of the Cu/NiO x /Pt device. This study suggests the conducting filament model to explain resistive switching behavior and improved resistive switching dispersions. The Cu-doping method produced more defects within the NiO x thin film, which improved voltage dispersion and decreased operation voltages.