Temperature dependence of drain-induced barrierlowering in deep submicrometre MOSFETs

A new method for extracting the drain-induced barrier lowering (DIBL) parameter in an MOS transistor is proposed. This method is used to study the influence of temperature on the DIBL effect. It is found that the DIBL parameter is almost independent of temperature between 50 and 300K. This method makes it also possible to recalculate the intrinsic output characteristics that the device would have in the absence of DIBL, and, in turn, to evaluate the intrinsic device saturation parameters.