The effects of (NH4)2Sx treatment on GaN and InN surfaces were investigated by X-ray photoelectron spectroscopy. It was found that native oxide layers were removed from nitride surfaces by HCl and (NH4)2Sx treatments and that S-terminated surface layers were formed. In addition, the S-terminated layer on the GaN surface was removed by H* irradiation. The usefulness of the combination of (NH4)2Sx treatment and post H* irradiation was shown.
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Maruyama et al. (2003) studied this question.
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