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February 1, 2001Japanese Journal of Applied PhysicsOpen Access

Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy

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YSYoshiki SaitoToyoda Gosei (Japan)NTN. TeraguchiNara Institute of Science and TechnologyASAkira SuzukiArtificial Intelligence in Medicine (Canada)

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Saito et al. (2001) studied this question.

synapsesocial.com/papers/6a99cac148cf0c24f4fdfbf5https://doi.org/10.1143/jjap.40.l91
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