A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing.
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Liu et al. (1995) studied this question.
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