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A reliable process has been developed for the fabrication of all Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes, and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single-electron transistor made of 0.3×0.3 μm2 area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate.
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Pavolotsky et al. (1999) studied this question.
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