Using dimethylaluminum hydride as a source gas, aluminum thin films with low-electrical resistivity were deposited via photochemical reactions induced by a deuterium lamp. The best resistivity was 6.2 µΩ·cm, which was as low as 2.3 times the value of bulk aluminum. Deposition rates increased with substrate temperature. At 200°C the rate was 20 nm/min. A disk-like thickness profile, as well as the vapor pressure dependence of deposition rates, indicated that surface reactions dominated.
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Hanabusa et al. (1988) studied this question.
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