An epitaxial silicon film was successfully grown on a Si {100} substrate at the susceptor temperature of 730 °C in the SiH2Cl2/H2 system. Irradiation with a mercury-xenon (Hg-Xe) lamp during deposition appeared to be essential for obtaining the epitaxial film. Surface cleaning in the experiment was done by preannealing the substrate in H2 at 730 °C with Hg-Xe lamp light irradiation. The film was characterized by etching, electron channeling pattern observation, Raman scattering spectroscopy, and spreading resistance measurement.
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Ishitani et al. (1985) studied this question.
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