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Localized enhancement of the reactive ion etching by laser irradiation has been investigated on GaAs by using CCl4 and H2 mixed gas. A laser-enhanced etching rate more than ten times as large as that for without laser irradiation was obtained. It was conjectured that the enhanced mechanism results mainly from the laser-assisted vaporization of the reaction-product species by localized heating of the sample.
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Tsukada et al. (1984) studied this question.
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