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Time-of-flight measurements of electrons moving perpendicular to the layers of biased GaAs/AlAs superlattices are presented. The transport times are clearly resolved. In addition, we observe tunnelling resonances which are related to band structure data obtained from photocurrent spectroscopy. Close to zero electric field, we study miniband conduction and field-induced localization. We present a new method to measure the corresponding drift mobilities directly.
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Schneider et al. (1989) studied this question.
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