We report the first operating bipolar transistor built with an AlGaAs/GaAs superlattice base. High current gain is measured with a suitable design of the bipolar transistor structure. Experimental results are in good agreement with a Bloch to hopping transition which is very sensitive to the AlGaAs barrier thickness. This interpretation is supported by a detailed numerical simulation reproducing the static Ic(Vce,Ib) transistor transfer data.
No takes yet. Share an insight, caveat, or question.
Palmier et al. (1986) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: