EL2, the main defect in GaAs, has gathered a lot of attention during the last years because of its interesting physical features as well as its importance for properties of GaAs devices. In spite of much effort put into the identification of EL2, the model of its nature is not fully established as yet. The results of different experiments performed in laboratories all over the world, leading to the determination of EL2 nature are presented and different EL2 models are discussed.
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M. Kamińska (1987) studied this question.
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