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Growth condition dependence of donor levels in Si-doped Al0.3Ga0.7As grown by molecular beam epitaxy has been studied by DLTS, C-V and low temperature (4.2 K) photoluminescence measurements. Concentration ratio of shallow donor to total donor is independent of growth temperature and group V/III flux ratio. This suggests that DX center is dominated only by AlAs mole fraction.
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Ashizawa et al. (1985) studied this question.
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