A term μCA in electron mobility proportional to T−1/2 is observed in highly compensated GaAs and AlxGa1−xAs. μCA has previously been thought to be due to space-charge scattering. Illumination with above-band-gap light is found to have no effect on μCA. Thus it could not be due to scattering from space-charge regions, which are collapsed by such illumination. μCA is found to be proportional to N−1A in nonintentionally doped specimens where C is the major shallow acceptor. For intentional compensation with Ge and Zn, no decrease in μCA is observed. μCA may be due to scattering from the local central-cell potential of the strongly electronegative C.
No takes yet. Share an insight, caveat, or question.
G. B. Stringfellow (1980) studied this question.