Single crystalline In2O3 is a prospective material to be used as a gate dielectric in InN based field effect transistors (FETs). This work addresses structural investigations of In2O3∕InN heterostuctures for metal-oxide-semiconductor FET devices. Single crystalline cubic In2O3 (111) films were epitaxially grown on hexagonal InN (0001) epilayers. The epitaxial relationship between the film and the template was determined as In2O3[111]‖InN[0001] and In2O3[101¯]‖InN⟨112¯0⟩ with an effective lattice mismatch of 2.14%. On the basis of the structural investigations, a phenomenological model for the growth of In2O3 on InN (0001) is proposed.
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Wang et al. (2007) studied this question.
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