Photoluminescence has been observed from oxygen (O16) ions implanted into ZnTe. Doses of 5 × 1013 oxygen ions/cm2 were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300–400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O18.
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Merz et al. (1969) studied this question.
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