Piezoreflectance, photoreflectance and reflectivity measurements have been performed on a sample consisting of one InAs monomolecular plane in bulklike GaAs grown by atomic layer molecular beam epitaxy. The heavy-hole and light-hole characteristics of the two excitonic InAs-related transitions observed are experimentally elucidated for the first time. The electric field modulation observed in the photoreflectance spectra of such a heterostrvcture cannot be attributed to the quantum-confined Stark effect.
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Castrillo et al. (1991) studied this question.
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