InAs monomolecular planes are grown in GaAs by flow-rate modulation epitaxy. This structure exhibits low-temperature (2 K) photoluminescence with high intensity and a small linewidth. Two InAs planes separated by N monolayers of GaAs also exhibit intense, narrow photoluminescence. The peak photon energies drastically increase with the distance between the planes. Assuming that an InAs plane in GaAs forms a 1-monolayer-thick InAs/GaAs quantum well, the photoluminescence peak photon energies and the drastic increase are explained using a finite square well model.
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Sato et al. (1989) studied this question.
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