Field-induced refractive index variation spectrum in a GaInAs/InP quantum wire structure

We report the electric field induced refractive index variation spectrum in a GaInAs/InP multilayered (three layers) quantum wire structure (λg∼1.48 μm) in the range 1.484–1.65 μm with the maximum positive index variation of 4% at around 1.52 μm at an applied reverse bias voltage of 3 V. We have also observed the anisotropic property of the index variation with respect to the quantum wire direction to the input light. These multilayered quantum wire structures were fabricated by low-pressure electron cyclotron resonance reactive ion beam etching and low-pressure organometallic vapor phase epitaxy methods.