Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE

Low defect nanometer structures of 70 nm ∼25 nm width are formed in GaInAs/GaInAsP/InP multi-quantum-well layers with low ion extraction voltage (20 V) and at low-pressure (LP) of etching gas (5×10-6 Torr) using electron cyclotron resonance reactive ion beam etching (ECR-RIBE) system for the first time. The room temperature photoluminescence peak intensity after etching and slight cleaning, taking into account the remaining volume of the GaInAs/GaInAsP layer, was almost 60% of that before etching, which proved the very low-damage nature of the present etching method. Moreover we also report for the first time the fabrication of multi-layered GaInAs/InP quantum wire (3 periods) structure using LP-ECR-RIBE.