Binding energies of Wannier excitons in a quantum-well wire consisting of a single wire of GaAs embedded in Ga1-x Al x As were calculated using a variational approach. The variations of the binding energies of the heavy and light hole excitons as a function of the width of the GaAs quantum-well wires for various values of the heights of the potential barrier were calculated and their behavior is discussed.
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Kodama et al. (1986) studied this question.
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