Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces

We propose a novel technique for organizing steps on Si surfaces. Arrays of small holes are formed on Si(111) wafers misoriented toward [112̄] by using conventional Si technology. The wafers are then annealed in an ultra-high vacuum at about 1300° C. During the hole filling-in process, steps on the surface are arranged regularly, and finally parallel step bands are ordered after the holes have completely disappeared.