We studied the quantum wire photodetector (QRIP) structures with an InGaAs quantum wires (QWRs) active region formed by the strain-induced lateral ordering (SILO) process. The InGaAs multiple layer QWR structure maintains a small total strain due to the strain-balanced nature of the SILO process. The effects of growth temperature and layer structures on the QWR formation are studied using photoluminescence and transmission electron microscope measurements. High-resolution x-ray diffraction studies on QRIP structures consisting of 20 QWR layers confirmed the strain-balanced property of SILO-based structures.
No takes yet. Share an insight, caveat, or question.
Tsai et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: