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A novel device - the quantum-dot infrared phototransistor (QDIP) - is proposed and considered theoretically. The QDIP utilizes intersubband electron transitions from the bound states. The dark current and sensitivity are calculated using a proposed analytical model of the QDIP. It is shown that the QDIP can exhibit low dark current, high photoelectric gain and sensitivity surpassing the characteristics of other intersubband photodetectors.
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V. Ryzhii (1996) studied this question.
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