Measurements of Lattice Parameters and Half-Widths of the Rocking Curve on GaAs Crystal by the X-Ray Double-Crystal Method Using a Cu Kα Doublet

GaAs wafers grown by HB and LEC techniques were appraised by the double-crystal method using a Cu Kα doublet. Distributions of lattice strains and defect density along the <110> radial direction on wafers have been obtained from measurements of lattice parameters and half-widths of the rocking curve, respectively.