Experimental study demonstrates independent closed-loop delay and slew rate regulation in paralleled silicon carbide modules, indicating improved dynamic current sharing without cross-coupling.
To ensure balanced current sharing between paralleled power modules, active gate drivers (AGDs) can be used to adjust the currents dynamically. However, achieving effective, flexible and accurate dynamic current adjustment is a challenge for AGDs under the very fast switching speed of silicon carbide (SiC) devices, e.g.,on/offdelay and current slew rate regulation scheme for AGDs for paralleling SiC metal-oxide-semiconductor field-effect-transistor (MOSFET) power modules is proposed in this article. The advantage of the proposed scheme is that it achieves independent closed-loop control for the delay regulation and the current slew rate regulation, i.e., the adjustment of the current slew rate will not affect the already-tuned delay compensation. Also, the proposed AGD based on gate resistance adjustment with just two push–pull driver channels and less switching actions can achieve the wider-range and multilevel current slew rate regulation. Experimental validation of the closed-loop current regulation for current sharing between SiC power modules with the presented AGD is provided.
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Li et al. (2024) studied this question.
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