Active Gate Driver for Improving Dynamic Current Sharing Performance of Paralleled SiC MOSFETs Based on Voltage‐Controlled Current Sources

To increase the current rating, silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) are usually connected in parallel. However, dynamic current imbalance is a great challenge in parallel applications. Based on the built model, this paper investigates the mechanisms of dynamic current imbalance, considering mismatched device parameters and common source inductance. Aiming at improving dynamic current sharing performance of paralleled SiC MOSFETs, an active gate driver (AGD) is proposed. The proposed AGD is based on di / dt feedback control and voltage‐controlled current sources to adjust the driving current of SiC MOSFETs, thereby achieving current balancing. The proposed AGD features a rapid response speed and can achieve dynamic current balancing within a single switching cycle. A double pulse test platform is established, and experimental results verify the effectiveness of the proposed AGD.