Integration of Complementary Metal–Oxide–Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature

Silicon-based single-electron transistors (SETs) and complementary metal–oxide–semiconductor (CMOS) devices have been integrated onto a single chip, and the operation of SET/CMOS integrated circuits has been demonstrated at room temperature. The fabrication process of SETs has been improved in terms of parasitic resistance suppression, threshold voltage control, and reduction in required time for electron-beam lithography for integration with CMOS devices. There is no significant degradation in the characteristics of CMOS devices owing to the special fabrication process of SETs operating at room temperature. CMOS 1-bit analog selectors, which are building blocks of multibit address decoders, have been combined with SETs, and the circuit operation has been demonstrated at room temperature for the first time. These results show the feasibility of SET/CMOS integrated circuits composed of high-density arrays of SETs and high-performance CMOS peripheral circuits, which fully leverage the advantages of SETs and CMOS.