Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOₓ nMOSFETs

We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOxgate-stacks. We observe two different IG-IDcorrelation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOxclose to the Si/SiOxinterface. Results reported in this letter provide useful information for improving the understanding of IG/IDRTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.