The energy-loss spectra of 25-keV electrons transmitted through thin amorphous Ge and Si films have been measured in the range of very small energy losses between 25 and 400 meV. The resolution was 4 and 6 meV. The main intensity in the spectra is located at low energy and is caused by "defect-induced" two phonon excitation.
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Schröder et al. (1972) studied this question.
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