Low-energy electron microscopy of semiconductor surfaces

The low-energy electron microscopy work on the structure and dynamics of semiconductor surfaces, in particular of Si(111) and Si(100) is reviewed. The phenomena studied include the (7×7) ↔ (1×1) phase transition of the Si(111) surface, the sublimation of Si from Si(100) and the growth of Si on Si(100). Interactions between steps and between steps and impurities are also discussed as are metal–silicon interactions, illustrated by the formation of CoSi2 by cobalt deposition.