Radiation damage in single crystals of silicox produced by bombardment with Ne+and P+ions

Single crystals of silicon have been bombarded in channeling and random directions by 66–70 keV ions of neon and phosphorous. The resulting radiation damage has been studied as a function of dose up to approx. 1016 ions/cm2 by successively measuring the dip in X-ray yields which occurs when protons are injected into the 〈110〉 channel.