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The traps in long duration phosphorescent SrAl 2 O 4 : Eu 2 + , Dy 3 + crystals have been evaluated using thermally stimulated luminescence and photostimulated luminescence (PSL) techniques. Afterglow phosphorescence is not observed at temperatures lower than 150 K. Traps with depths of E t , TSL = 0.0024 , 0.46, and 0.49 eV are detected by thermally stimulated luminescence techniques. Photostimulated luminescence evaluations reveal that trapped carriers can be released optically using an infrared laser with E t , PSL = 0.55 eV . The trap at E t , PSL = 0.55 eV detected by the PSL may be correlated with the shallow trap levels at E t , TSL = 0.0024 eV .
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Katsumata et al. (2003) studied this question.
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