Search for Enhancement of Bremsstrahlung Produced by 575-Mev Electrons in a Single Crystal of Silicon

A single-crystal of silicon of 0.013-in. thickness was placed in the analyzed beam of the Stanford electron linear accelerator. The crystal was mounted in a double goniometer. X rays radiated in the crystal were detected by photoproduction of pions in a polyethylene target. The pion counting rate was examined as a function of scanning the goniometer over a range of sintering time 0.04 radian about both axes in steps of 0.010 radian. No statistically significant dependence of x-ray intensity on crystal orientation was found. (W.D.M.)