Defects are often taken as the cause of deviations in the current-voltage characteristics of heterostructures such as barrier or double barrier, and the so-called defect-assisted tunneling effect has been assumed to occur in certain cases. We present an analytical analysis of the tunneling effect which occurs through a barrier and which is assisted by an energy level associated with a defect. Moreover, we show that a negative differential resistance can occur using a single barrier in which a defect is located.
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Stiévenard et al. (1992) studied this question.
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