Depth distributions and range and shape parameters for 1H and 2H implanted into Si and GaAs in random and channeling orientations

We report the results of a systematic study of the implantation of 1H and 2H ions at 50, 100, and 200 keV energies and 3×1013, 3×1014, and 3×1015 cm−2 fluences into the same Si or the same GaAs crystals in (100) random and 〈100〉 and 〈110〉 channeling orientations measured using secondary ion mass spectrometry. We report ranges and profile shape parameters for the resulting random and channeled depth distributions, and various ratios and comparisons among these. In addition, values of the energy exponent p in the expression for electronic stopping Se =kEp are determined in this energy range, and values of electronic stopping Se and k are calculated for 1H and 2H in Si and GaAs. The 〈100〉 channeling ranges are slightly deeper than the (100) random ranges Rp. The 〈110〉 channeling ranges are 1.4 to 1.7 times as deep (varying with energy) as the random ranges Rp in GaAs, and 1.2 to 1.5 times as deep as Rp in Si. The random and channeling ranges for 2H are slightly greater than those for 1H in this energy range. Values of p are 0.83 for 1H in 〈110〉 Si and 0.76 for 2H in 〈110〉 Si, and 0.85 for 1H in 〈110〉 GaAs, and 0.73 for 2H in 〈110〉 GaAs.