The optical properties of ZnTe in the visible and the ir and the possibilities of realizing waveguides by ion implantation were investigated in this semiconductor. The main characteristics of the refractive index profiles obtained by implantation of light ions (proton, helium, boron) vs dose, energy, thermal annealing, and wavelength are presented. It is shown that these waveguides are the result of both the macroscopic implantation and the microscopic properties of ZnTe where the damages induced by this implantation extend deep into the substrate. This explains the low losses (1-4 dB/cm) measured in these waveguides. A first physical interpretation of the results is proposed, and some assumptions are discussed.
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Labrunie et al. (1977) studied this question.
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