Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 8, 2015Scientific ReportsOpen Access

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

View Full Paper
Ask AI
Bookmark
Share

Authors

MSMaria J P SousaTET. C. EstevesNSN. Ben SédrineInstituto Superior de Espinho

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sousa et al. (2015) studied this question.

synapsesocial.com/papers/6a8bca412448cb7c68339676https://doi.org/10.1038/srep09703
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells2014 · 54 citations
  2. 2Microscopic analysis of optical gain in InGaN∕GaN quantum wells2006 · 68 citations
  3. 3Excitation-power dependence of the near-band-edge photoluminescence of semiconductors1992 · 1,117 citations
  4. 4The enhancement of quantum well intermixing through repeated ion implantation1994 · 24 citations
  5. 5Auger recombination rates in nitrides from first principles2009 · 355 citations