Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires

We present the structure of a GaAs/GaAlAs quantum well, which can promote strong mixing rates upon high-dose implantation, with good recovery of the electronic properties after annealing. This structure is employed to fabricate quantum-well wires by Ga+ masked implantation. Low-temperature photoluminescence measurements reveal large lateral modulations of the effective band gap (≳178 meV), and small lateral interdiffusion lengths (10 nm). A simple calculation shows that one-dimensional quantization energies between 11 and 20 meV can be expected in these structures.