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The photoinduced recovery that starts from the full quenched state in tunneling-assisted hopping conduction has been observed in neutron-irradiated semi-insulating GaAs preilluminated with laser-diode light of 1410-nm wavelength. This recovery phenomenon supports the interpretation that the EL2-like defects created by thermal annealing at around 250 ^∘{}C after neutron irradiation are to be identified as the native EL2 defect. According to the photoresponse study using different wavelengths, neutron-induced EL2 defects are likely to have several quenchable components.
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Kuriyama et al. (1992) studied this question.
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