Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 1, 1983Journal of Applied Physics

Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAs

View Full Paper
Ask AI
Bookmark
Share

Authors

MTM. TaniguchiKyoto UniversityTIT. IkomaTokyo University of Science

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Taniguchi et al. (1983) studied this question.

synapsesocial.com/papers/6a947ecee4a098cd2331a23fhttps://doi.org/10.1063/1.331925
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors1982 · 280 citations
  2. 2Deep-level transient spectroscopy: A new method to characterize traps in semiconductors1974 · 3,735 citations
  3. 3Electron traps in bulk and epitaxial GaAs crystals1977 · 732 citations
  4. 4Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs1979 · 114 citations
  5. 5Nonradiative capture and recombination by multiphonon emission in GaAs and GaP1977 · 1,206 citations