What question did this study set out to answer?

To evaluate the inversion channel mobility and interface electrical properties of 4H-SiC MOSFETs fabricated on the (112~0) crystal face relative to the standard (0001) face.

December 1, 1999IEEE Electron Device Letters

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

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Authors

HYHiroshi YanoUniversity of Tsukuba THT. HiraoPanasonic (Japan)TKTsunenobu KimotoKyoto University

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Implication

Experimental study demonstrates a 17-fold increase in channel mobility in 4H-SiC MOSFETs on the (1120) face, indicating significantly fewer interface traps and lower threshold voltages.

Key Points

To evaluate the inversion channel mobility and interface electrical properties of 4H-SiC MOSFETs fabricated on the (112~0) crystal face relative to the standard (0001) face.
Fabricated 4H-SiC MOSFETs on both the (112~0) face and the conventional (0001) Si-face.
Characterized electrical performance parameters including inversion channel mobility, threshold voltage, and mobility anisotropy.
Inversion channel mobility on the (112~0) face reached 95.9 cm2/Vs, which is 17 times higher than the 5.59 cm2/Vs observed on the conventional (0001) Si-face.
MOSFETs on the (112~0) face showed a lower threshold voltage, demonstrating fewer negative charges at the MOS interface.
Channel mobility exhibited low anisotropy, with a mobility ratio of 0.85 between crystal directions, consistent with bulk electron mobility behavior.

Cite This Study

Yano et al. (1999) studied this question.

synapsesocial.com/papers/6a8bcc3d52e1a91077e97c49 https://doi.org/10.1109/55.806101

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December 1, 1999IEEE Electron Device Letters

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

View Full Paper

Ask AI

Bookmark

Authors

HYHiroshi YanoUniversity of Tsukuba THT. HiraoPanasonic (Japan)TKTsunenobu KimotoKyoto University

Discussion

Member takes

Implication

Experimental study demonstrates a 17-fold increase in channel mobility in 4H-SiC MOSFETs on the (1120) face, indicating significantly fewer interface traps and lower threshold voltages.

Key Points

To evaluate the inversion channel mobility and interface electrical properties of 4H-SiC MOSFETs fabricated on the (112~0) crystal face relative to the standard (0001) face.
Fabricated 4H-SiC MOSFETs on both the (112~0) face and the conventional (0001) Si-face.
Characterized electrical performance parameters including inversion channel mobility, threshold voltage, and mobility anisotropy.
Inversion channel mobility on the (112~0) face reached 95.9 cm2/Vs, which is 17 times higher than the 5.59 cm2/Vs observed on the conventional (0001) Si-face.
MOSFETs on the (112~0) face showed a lower threshold voltage, demonstrating fewer negative charges at the MOS interface.
Channel mobility exhibited low anisotropy, with a mobility ratio of 0.85 between crystal directions, consistent with bulk electron mobility behavior.

Cite This Study

Yano et al. (1999) studied this question.

synapsesocial.com/papers/6a8bcc3d52e1a91077e97c49 https://doi.org/10.1109/55.806101

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