Self-Limiting Growth of Specular InP Layer by Alternate Injection of Triethylindium and Tertiarybutylphosphine in Ultrahigh Vacuum

Alternate injection of triethylindium (TEI) and tertiarybutylphosphine without precracking has been studied to realize low-temperature growth of an InP layer on an (001) InP substrate in ultrahigh vacuum (UHV). Self-limiting growth, in which the growth rate is independent of the injection time and the injection pressure of the sources, was demonstrated at a temperature as low as 320°C. The self-limiting growth with a growth rate of around 0.75 monolayer per cycle and specular surface morphology was achieved. A clean regrown interface is expected by combining with the digital etching achieved at low temperature in UHV. The decomposition mechanism of TEI on InP surface is discussed.